All ADI
Texas Instruments
MPS
TI(德州仪器)
TE Connectivity(泰科电子)
ROHM
Tagore
ST
Slkor(萨科微)
TOREX
RENESAS
Qorvo
PHILIPS(飞利浦)
PASTERNACK
PANASONIC(松下)
onsemi
NTE ELECTRONICS, INC.
Nisshinbo
MOTOROLA(摩托罗拉)
Mini-Circuits
L3HARRIS
JRC
Integra Technologies
Infineon
II-VI / Finisar
HUBER+SUHNER
Hittite
HARRIS(哈利斯)
Guerrilla RF
DIODES
Crystek
CMLMICRO
California Eastern Laboratories
Broadcom/AVAGO(安华高)
Broadcom(博通)
Bolton Technical
BeRex
Atlanta Micro Inc.
Ampleon(安谱隆)
Amphenol
ALLEGRO(美国埃戈罗)
AKM
AEI
MAXIM
SKYWORKS
NXP
MICROCHIP
MACOM
HARRIS
Модель | Производитель | Упаковка | Метод упаковки | Количество в упаковке (мин.) | Описание | Получить предложение |
---|---|---|---|---|---|---|
AP22615AWU-7 | DIODES | TSOT-23-6 | TAPE | 3000 | Number of channels: 1, output current: 3A, input voltage: 3V~5.5V, on-resistance: 40mΩ |
|
AP9211SA-DD-HAC-7 | DIODES | UDFN2030-6 | TAPE | 3000 | Chip type: battery protection chip, battery type: lithium ion/polymer, battery number: 1 |
|
APX803L40-27SA-7 | DIODES | SOT-23 | TAPE | 3000 | Chip type: voltage detector, output type: open drain, input voltage: 900mV~5.5V, reset valid level: low level valid |
|
APX810-23SRG-7 | DIODES | SOT-23R | TAPE | 3000 | Chip type: simple reset/power-on reset, output type: push-pull, input voltage: 1.1V~5.5V, reset valid level: high level valid |
|
AP7343D-20FS4-7B | DIODES | X2-DFN1010-4 | TAPE | 10000 | - |
|
AP431WG-7 | DIODES | - | TAPE | 3000 | - |
|
AL5814QMP-13 | DIODES | MSOP-8-EP | TAPE | 3000 | - |
|
AS324AMTR-G1 | DIODES | SO-14 | TAPE | 4000 | 36V, input offset voltage (Vos): 5mV, input offset voltage temperature drift (Vos TC): 7uV/℃ |
|
AP4313KTR-G1 | DIODES | SOT-23-6 | TAPE | 3000 | Single channel, supply current: 600uA, -40℃~+105℃ |
|
ZXCT213ADSJ-7 | DIODES | U-QFN1418-10 | TAPE | 3000 | - |
|
PAM2321AYMADJ | DIODES | TDFN-10(3x3) | TAPE | 3000 | Function type: buck type, input voltage: 2.7V~5.5V, output current: 2A, switching frequency: 3MHz |
|
DGD21064MS14-13 | DIODES | SO-14 | TAPE | 2500 | Drive configuration: half bridge, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 290mA |
|