All ADI
Texas Instruments
MPS
TI(德州仪器)
TE Connectivity(泰科电子)
ROHM
Tagore
ST
Slkor(萨科微)
TOREX
RENESAS
Qorvo
PHILIPS(飞利浦)
PASTERNACK
PANASONIC(松下)
onsemi
NTE ELECTRONICS, INC.
Nisshinbo
MOTOROLA(摩托罗拉)
Mini-Circuits
L3HARRIS
JRC
Integra Technologies
Infineon
II-VI / Finisar
HUBER+SUHNER
Hittite
HARRIS(哈利斯)
Guerrilla RF
DIODES
Crystek
CMLMICRO
California Eastern Laboratories
Broadcom/AVAGO(安华高)
Broadcom(博通)
Bolton Technical
BeRex
Atlanta Micro Inc.
Ampleon(安谱隆)
Amphenol
ALLEGRO(美国埃戈罗)
AKM
AEI
MAXIM
SKYWORKS
NXP
MICROCHIP
MACOM
HARRIS
| Модель | Производитель | Упаковка | Метод упаковки | Количество в упаковке (мин.) | Описание | Получить предложение |
|---|---|---|---|---|---|---|
| AP7311-30WG-7 | DIODES | SOT-25 | TAPE | 3000 | Output type: fixed, maximum input voltage: 6V, output voltage: 3V, output current: 150mA |
|
| AP7361E-FGE-7 | DIODES | DFN3030-8 | TAPE | 3000 | Output type: adjustable, maximum input voltage: 6V, output voltage: 1V~5V, output current: 1A |
|
| AP7361C-25FGE-7 | DIODES | UDFN3030-8 | TAPE | 3000 | Features: Anti-static protection; Automotive certification; Short circuit protection; Low ESR; Thermal protection (TSD); Overcurrent protection (OCP); With enable |
|
| PT8A2766ITAEX | DIODES | SOT-23-5 | TAPE | 3000 | Number of channels: 1, output current: 5A, input voltage: 1.6V~5.5V, operating temperature: 0℃~+85℃ |
|
| AP9214LA-AH-HSB-7 | DIODES | UDFN2535-6 | TAPE | 3000 | Chip type: battery protection chip, battery type: lithium ion/polymer, number of cells: 1, operating temperature: -40℃~+85℃ |
|
| APX803L05-36SA-7 | DIODES | SOT-23 | TAPE | 3000 | Chip type: voltage detector, output type: open drain, input voltage: 900mV~5.5V, reset valid level: low level valid |
|
| AP7383-50FDC-7 | DIODES | UDFN2020-6 | TAPE | 3000 | - |
|
| AP7332-2833FM-7 | DIODES | UDFN2018-6 | TAPE | 3000 | - |
|
| PT7M825TW5-7 | DIODES | SOT-25-5 | TAPE | 3000 | - |
|
| AL8806QMP-13 | DIODES | MSOP-8-EP | TAPE | 2500 | - |
|
| ZXCT1010E5TA | DIODES | SOT-23-5 | TAPE | 3000 | Supply voltage: 2.5V~20V, operating temperature: -40℃~+85℃ |
|
| AZV358MTR-E1 | DIODES | SOIC-8 | TAPE | 4000 | Dual channel, 1MHz, slew rate (SR): 1V/us, 15nA |
|
