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| Модель | Производитель | Упаковка | Метод упаковки | Количество в упаковке (мин.) | Описание | Получить предложение |
|---|---|---|---|---|---|---|
| MCP14E4T-E/SN | MICROCHIP | SOIC-8 | TAPE | 3300 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
| MCP14E4-E/MF | MICROCHIP | DFN-8-EP(5x6) | TAPE | 1000 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
| MCP14E3T-E/SN | MICROCHIP | SOIC-8 | TAPE | 3300 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
| MCP14E5T-E/SN | MICROCHIP | SOIC-8 | TAPE | 3300 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
| MCP14E4T-E/SL | MICROCHIP | SOIC-16 | TAPE | 2600 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
| MCP14E5T-E/SL | MICROCHIP | SOIC-16 | TAPE | 2600 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
| MCP14E4T-E/MF | MICROCHIP | DFN-8-EP(3x3) | TAPE | 3300 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
| MCP14E5T-E/MF | MICROCHIP | DFN-8-EP(3x3) | TAPE | 3300 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
| MCP14E5-E/MF | MICROCHIP | DFN-8-EP(5x6) | TAPE | 60 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
| MCP14E3-E/MF | MICROCHIP | WDFN-8-EP(5x6) | TAPE | 60 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
| MCP14E3-E/SN | MICROCHIP | SOIC-8 | TAPE | 100 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
| MCP14E4-E/P | MICROCHIP | PDIP-8 | TAPE | 60 | Drive configuration: low side, load type: MOSFET; IGBT, number of drive channels: 2, peak sink current: 4A |
|
