All ADI
Texas Instruments
MPS
TI(德州仪器)
TE Connectivity(泰科电子)
ROHM
Tagore
ST
Slkor(萨科微)
TOREX
RENESAS
Qorvo
PHILIPS(飞利浦)
PASTERNACK
PANASONIC(松下)
onsemi
NTE ELECTRONICS, INC.
Nisshinbo
MOTOROLA(摩托罗拉)
Mini-Circuits
L3HARRIS
JRC
Integra Technologies
Infineon
II-VI / Finisar
HUBER+SUHNER
Hittite
HARRIS(哈利斯)
Guerrilla RF
DIODES
Crystek
CMLMICRO
California Eastern Laboratories
Broadcom/AVAGO(安华高)
Broadcom(博通)
Bolton Technical
BeRex
Atlanta Micro Inc.
Ampleon(安谱隆)
Amphenol
ALLEGRO(美国埃戈罗)
AKM
AEI
MAXIM
SKYWORKS
NXP
MICROCHIP
MACOM
HARRIS
| Модель | Производитель | Упаковка | Метод упаковки | Количество в упаковке (мин.) | Описание | Получить предложение |
|---|---|---|---|---|---|---|
| ISL2111ABZ | RENESAS | SOIC-8 | TAPE | 98 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 4A |
|
| HIP2210FRTZ-T7A | RENESAS | TDFN-10(4x4) | TAPE | 250 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 4A |
|
| HIP2210FRTZ-T | RENESAS | TDFN-10(4x4) | TAPE | 6000 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 4A |
|
| ISL6609ACBZ | RENESAS | SOIC-8 | TAPE | 980 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 4A |
|
| ISL2111ARTZ-T | RENESAS | WSON-10-EP(4x4) | TAPE | 6000 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 4A |
|
| ISL2110ABZ-T | RENESAS | SOIC-8 | TAPE | 2500 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 4A |
|
| ISL6596IRZ | RENESAS | TDFN-10-EP(3x3) | TAPE | 100 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 4A |
|
| ZL1505ALNFT1 | RENESAS | DFN-10-EP(3x3) | TAPE | 1000 | Drive configuration: half-bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 3.2A |
|
| HIP2101IBZT | RENESAS | SOIC-8 | TAPE | 2500 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 2A |
|
| HIP2100IBZ | RENESAS | SOIC-8-EP | TAPE | 98 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 2A |
|
| ISL6620CRZ-T | RENESAS | DFN-10-EP(3x3) | TAPE | 6000 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 2A |
|
| ISL6594ACRZ-T | RENESAS | DFN-10(3x3) | TAPE | 1 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, peak sink current: 2A |
|
