Модель Производитель Упаковка Метод упаковки Количество в упаковке (мин.) Описание Получить предложение
HIP6601BCBZ-T RENESAS SOIC-8 TAPE 2500 Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, power supply voltage: 10.8V~13.2V
HIP6601BCB RENESAS SOIC-8 TAPE 98 Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, power supply voltage: 10.8V~13.2V
HIP6601BCB-T RENESAS SOIC-8 TAPE 2500 Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, power supply voltage: 10.8V~13.2V
HIP6601BECB RENESAS SOIC-8-EP TAPE 98 Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, power supply voltage: 10.8V~13.2V
HIP6603BCBZ RENESAS SOIC-8 TAPE 1 Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, power supply voltage: 10.8V~13.2V
HIP4086ABZT RENESAS SOIC-24-300mil TAPE 1000 Drive configuration: half bridge, load type: MOSFET, power supply voltage: 7V~15V, operating temperature: -40℃~+150℃@(Tj)
ISL55110IRZ RENESAS QFN-16-EP(4x4) TAPE 75 Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj)
ISL55111IVZ RENESAS TSSOP-8 TAPE 96 Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj)
ISL55110IVZ-T7A RENESAS TSSOP-8 TAPE 250 Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj)
ISL55110IVZ RENESAS TSSOP-8 TAPE 96 Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj)
ISL55110IRZ-T7A RENESAS VQFN-16-EP(4x4) TAPE 250 Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj)
ISL55110IVZ-T RENESAS TSSOP-8 TAPE 2500 Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj)