All ADI
Texas Instruments
MPS
TI(德州仪器)
TE Connectivity(泰科电子)
ROHM
Tagore
ST
Slkor(萨科微)
TOREX
RENESAS
Qorvo
PHILIPS(飞利浦)
PASTERNACK
PANASONIC(松下)
onsemi
NTE ELECTRONICS, INC.
Nisshinbo
MOTOROLA(摩托罗拉)
Mini-Circuits
L3HARRIS
JRC
Integra Technologies
Infineon
II-VI / Finisar
HUBER+SUHNER
Hittite
HARRIS(哈利斯)
Guerrilla RF
DIODES
Crystek
CMLMICRO
California Eastern Laboratories
Broadcom/AVAGO(安华高)
Broadcom(博通)
Bolton Technical
BeRex
Atlanta Micro Inc.
Ampleon(安谱隆)
Amphenol
ALLEGRO(美国埃戈罗)
AKM
AEI
MAXIM
SKYWORKS
NXP
MICROCHIP
MACOM
HARRIS
Модель | Производитель | Упаковка | Метод упаковки | Количество в упаковке (мин.) | Описание | Получить предложение |
---|---|---|---|---|---|---|
HIP6601BCBZ-T | RENESAS | SOIC-8 | TAPE | 2500 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, power supply voltage: 10.8V~13.2V |
|
HIP6601BCB | RENESAS | SOIC-8 | TAPE | 98 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, power supply voltage: 10.8V~13.2V |
|
HIP6601BCB-T | RENESAS | SOIC-8 | TAPE | 2500 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, power supply voltage: 10.8V~13.2V |
|
HIP6601BECB | RENESAS | SOIC-8-EP | TAPE | 98 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, power supply voltage: 10.8V~13.2V |
|
HIP6603BCBZ | RENESAS | SOIC-8 | TAPE | 1 | Drive configuration: half bridge, load type: MOSFET, number of drive channels: 2, power supply voltage: 10.8V~13.2V |
|
HIP4086ABZT | RENESAS | SOIC-24-300mil | TAPE | 1000 | Drive configuration: half bridge, load type: MOSFET, power supply voltage: 7V~15V, operating temperature: -40℃~+150℃@(Tj) |
|
ISL55110IRZ | RENESAS | QFN-16-EP(4x4) | TAPE | 75 | Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj) |
|
ISL55111IVZ | RENESAS | TSSOP-8 | TAPE | 96 | Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj) |
|
ISL55110IVZ-T7A | RENESAS | TSSOP-8 | TAPE | 250 | Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj) |
|
ISL55110IVZ | RENESAS | TSSOP-8 | TAPE | 96 | Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj) |
|
ISL55110IRZ-T7A | RENESAS | VQFN-16-EP(4x4) | TAPE | 250 | Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj) |
|
ISL55110IVZ-T | RENESAS | TSSOP-8 | TAPE | 2500 | Drive configuration: half bridge, load type: MOSFET, power supply voltage: 2.7V~5.5V, operating temperature: -40℃~+150℃@(Tj) |
|